ASML Secures High‑NA EUV Commitments from Samsung and TSMC Amid Rising AI Chip Demand
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ASML has secured High-NA EUV commitments from Samsung, targeting DRAM production from 2028, and TSMC, targeting integration by 2030, on tools costing roughly $400 million each. The company also confirmed a second campus near Eindhoven, opening in phases from 2029 with about 3,000 initial staff and room for up to 20,000 workplaces at full build-out. ASML frames High-NA as what keeps AI chip scaling viable toward 2033.
ASML has secured High-NA EUV commitments from Samsung and TSMC, with Samsung planning to use the systems for DRAM production from 2028 and TSMC targeting integration by 2030. Each machine costs roughly $400 million, which is why a handful of commitments is a material revenue event rather than a routine order.
Alongside the customer news, ASML confirmed plans for a second campus near Eindhoven. The site is being built in phases: the first buildings open in 2029 with roughly 3,000 staff, and the master plan allows room for up to 20,000 workplaces at full build-out. That last figure is a long-horizon capacity number for the site, not a near-term hiring commitment, and it is routinely reported as though it were the latter.
The strategic argument is a roadmap one. High-NA extends optical lithography past the point where current EUV tools require multi-patterning, and ASML has framed the technology alongside advances in photomasks as what keeps AI chip scaling viable out to 2033. Whether customers adopt it on that timeline is the open question: High-NA tools are expensive enough that a foundry can rationally choose to stretch existing EUV with more patterning steps instead.
What to watch: whether Samsung's 2028 DRAM date holds, since memory has historically been slower to adopt leading-edge lithography than logic; whether Intel's earlier High-NA commitments translate into volume production ahead of either; and ASML's order book disclosures over the next few quarters, which will show whether these commitments are the start of a wave or the extent of it.
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