ASML Secures High‑NA EUV Commitments from Samsung and TSMC Amid Rising AI Chip Demand

ASML has secured High-NA EUV commitments from Samsung and TSMC, with Samsung planning to use the systems for DRAM production from 2028 and TSMC targeting integration by 2030 . Each machine costs roughly $400 million, which is why a handful of commitments is a material revenue event rather than a routine order.

Alongside the customer news, ASML confirmed plans for a second campus near Eindhoven. The site is being built in phases: the first buildings open in 2029 with roughly 3,000 staff, and the master plan allows room for up to 20,000 workplaces at full build-out. That last figure is a long-horizon capacity number for the site, not a near-term hiring commitment, and it is routinely reported as though it were the latter.

The strategic argument is a roadmap one. High-NA extends optical lithography past the point where current EUV tools require multi-patterning, and ASML has framed the technology alongside advances in photomasks as what keeps AI chip scaling viable out to 2033 . Whether customers adopt it on that timeline is the open question: High-NA tools are expensive enough that a foundry can rationally choose to stretch existing EUV with more patterning steps instead.

What to watch: whether Samsung's 2028 DRAM date holds, since memory has historically been slower to adopt leading-edge lithography than logic; whether Intel's earlier High-NA commitments translate into volume production ahead of either; and ASML's order book disclosures over the next few quarters, which will show whether these commitments are the start of a wave or the extent of it.

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